1. The metal stripping process refers to a fine photolithography etching process. After the substrate is coated with photoresist, exposed, and developed, the photoresist film with a certain pattern is used as a mask, and the metal required for evaporation is glued with glue. Then, while removing the photoresist, The metal on the film is peeled off together, and only the metal with the original pattern is left on the substrate. The advantage of the metal lift-off process is that sub-micron patterns can be obtained with sharp edges and precise pattern dimensions. This process can be widely used in the manufacture of semiconductor devices requiring fine lithographic patterns

2. The stripping process steps are generally as follows: coating, exposing, developing, and hardening the film to obtain the required graphics, then metallizing the film (usually by evaporation), and then using organic solvents (usually ethanol and acetone) to remove light resist. At the same time, the metal on top of the resist is detached with the resist, while the metal in direct contact with the GaAs wafer is retained.
Unlike the etching process, the success of the metal stripping process is that the metal is particularly sensitive to the edge of the resist. The resist pattern is usually made into a cross-sectional shape with a small opening and a large cavity with a top protruding edge. Sectional photolithography.